HGQ018N03A是華潤華晶的一款30V 190A MOS管,采用DFN5X6-8封裝,東森微電子是華晶授權代理商,常備HGQ018N03A庫存,并可免費提供樣品及技術支持,可開13%增票.
HGQ018N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard.
*Low Gate Charge
*Low Reverse transfer capacitances
*100%Single Pulse avalanche energy Test
Power switch circuit of adaptor and charger.